Abstract
InSe Si heterojunctions have been prepared by molecular beam deposition of an InSe epitaxial film, upon a clean 7 × 7-reconstructed Si(111) surface. The InSe layered semiconductor had its c-axis normal to the (111) plane of Si. These heterojunctions have been studied upon sequential thermal thinning of the InSe film under ultrahigh vacuum by low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS). Upon reaching the interface, several reconstructions were observed depending on the remaining Se and In coverages at the Si surface. It is shown that the Si surface can be covered by half a layer of InSe having the 1 × 1 unit mesh of the substrate. Band offset determination is briefly discussed.
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