Abstract
The interfaces between (In,Ga)Sb and InAs(100) grown by molecular-beam epitaxy have been investigated by x-ray diffraction, x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy. The InAs on (In,Ga)Sb interface has been found to be significantly broader than the reverse one and the asymmetry is the result of mixing between arsenic and antimony. The studies of the growth surfaces have shown a persistent presence of antimony on an InAs surface suggesting a lower, antimony-rich, surface free energy. This energy imbalance indicates a driving mechanism behind the mixing of the group-V elements as the growth of InAs on (Ga, In)Sb is commenced. The band offset of the InAs on (Ga,In)Sb has been determined by XPS. The In 4d and Ga 3d to valence-band maximum binding energy differences for bulk InAs and GaSb were obtained by fitting the experimental valence-band density of states (VBDOS) to the experimentally broadened, theoretical VBDOS. The core-level separation between In 4d and Ga 3d peaks from the InAs/GaSb structure was determined by fitting Gaussian–Lorentzian functions to the peaks. The band offset was determined to be 0.62±0.1 eV.
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