Abstract
Electron scattering by interface phonon modes in GaAs/AlAs quantum dots is investigated. The emission rates are calculated using an electron-phonon interaction Hamiltonian derived in the framework of the dielectric continuum model. The effect of the embedding material AlAs on the electron relaxation by interface phonons is analyzed by comparing the emission rates with those obtained for GaAs free standing quantum dots in vacuum. This effect reduces the emission rates yielding relaxation times slower than the radiative recombination lifetime of electrons and holes in their ground levels. In GaAs/AlAs quantum dots, it appears that the contribution of the electron relaxation via interface phonon emission to the radiative decay processes is less significant than the relaxation mechanisms via longitudinal optical and longitudinal acoustic phonon. Faster relaxation times are obtained if the interface phonon mode involved in the scattering processes is antisymmetric.
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