Abstract
Van der Waals (vdW) heterostructure composed of two-dimensional (2D) materials and 2D perovskite has shown excellent optoelectrical properties recently, while the interfacial coupling is less investigated. Here, van der Waals InSe/(C4H9NH3)2(CH3NH3)Pb2I7 heterostructure is fabricated and systemically investigated by photoluminescence (PL) spectroscopy. An optical broadband emission is generated due to the formation of heterostructure. The first principle calculation and variable PL spectra suggest the dynamic generation of defects such as iodine vacancy and charge states. Electron–phonon coupling of the 2D perovskite is weakened from −127 meV to −90 meV in the heterostructure. The band offset causes the built-in electrical field, which strengthens the optoelectrical response of heterostructure devices. The results deepen the understanding of the interfacial optoelectrical dynamic of 2D perovskite-related vdW heterostructure and help develop superior optoelectrical vdW heterostructure devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
