Interface optimization using diindenoperylene for C60 thin film transistors with high electron mobility and stability

Abstract

C60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (111) oriented C60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21cm2V−1s−1 to 2.92cm2V−1s−1 by inserting the template-DIP layer. Moreover much higher operational stability is also observed for the DIP-template C60 OTFTs. A grazing incidence X-ray diffraction and ultrahigh-sensitivity photoelectron spectroscopy measurements indicate that the improved electron mobility and stability arise from the decreased density of trap states in the C60 film due to increased (111) orientation of C60-grains and their crystallinity on the DIP template.