Abstract
In this report, the impact of atomic-layer-deposition-derived different laminated gate stacks on the interface chemistry and electrical performance of Yb2O3/GaSb metal-oxide-semiconductor (MOS) cap...
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
