Abstract

According to the potential barriers generated by the silver, glass layer, and N+ emitter, an analytical model is developed to explain interface contact performance between the printed thick-film silver paste and emitter for crystalline silicon solar cells. According to the model, the front contact resistance between the sintered silver and N+ emitter is simulated at different doping concentrations, temperatures, and density of state. The quantitative expression of interface contact resistance between the printed thick-film silver paste and N+ emitter is derived for the first time. The results in this study unify different viewpoints about the current transport mechanisms at the sintered silver-silicon interface. If the glass frit chemistry and silver particle size are carefully tailored, the silver consumption per watt can be reduced, and the efficiency of crystalline silicon solar cells can be further improved. The results lay the foundation for studying the screen-printed crystalline silicon solar cell front contact metallization system. Copyright © 2013 John Wiley & Sons, Ltd.

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