Abstract
Interfaces of epitaxial CuInSe2 (112) surfaces to ZnO have been prepared by Atomic Layer Deposition (ALD) and are analyzed in situ by photoelectron spectroscopy at BESSY. LEED data show a (0001) oriented ZnO film for thicker films despite the large lattice mismatch. In contrast to results obtained from ZnO-MOMBE (Metal-Organic Molecular Beam Epitaxy) preparation where an inherent ZnSe interface layer of 2nm is formed, for ALD a ZnIn2Se4 interface layer is observed which is introducing a different band alignment as in the MOMBE case.
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Schedule a callMore From: Radiation physics and chemistry (Oxford, England : 1993)
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