Interface formation and thermal stability of Sn overlayers grown on cubic SiC(100)

Abstract

We present an angle resolved synchrotron radiation photoemission study in the photon energy range hν=40–140 eV of the Sn/SiC(100) interface formation. Valence-band and core level photoemission spectra suggest that the first monolayer of Sn grows as a two-dimensional layer in the tetrahedrally bonded α phase. Subsequent layers grow as metallic β-Sn in a three-dimensional cluster mode. Heating a 60 Å Sn/SiC(100) interface grown at room temperature to 400 °C leads to a Sn-Si reaction with a breakdown of the α phase and qualitative changes in the sizes and/or shapes of the Sn overlayer clusters. Heating to 1000 °C accelerates the Sn-Si reaction but does not seem to completely remove the β-Sn clusters.