Abstract
Using reflection high-energy electron diffraction as well as ultraviolet and X-ray photoemission spectroscopy we have investigated the growth of epitaxial Fe ultrathin films onto Al 0.48 In 0.52 (001)-(2 x 4) surface. The Fe films grow in a body centered cubic (bcc) structure with epitaxial relationship Fe(001) //Al 0.48 In 0.52 As (001) . The analysis of the photoemission data demonstrates that Fe atoms react with the Al 0.48 In 0.52 As substrate. In and As atoms, liberated during the first stage of the growth, tend to segregate at the films surface while reacting Al atoms are accommodated in an interfacial alloy. The Fermi level pinning position at the Fe/Al 0.48 In 0.52 As (001) interface, determined from the photoemission results, is found 0.76 +/- 0.08eV below the conduction band minimum.
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