Interface excitons in a type-II ZnSe/ZnTe heterojunction under hydrostatic pressure: the triangle potential well approximation

Abstract

Taking into consideration the band bending near the interface and the electron–LO phonon interaction, the ground-state binding energies of interface heavy-hole excitons in ZnSe/ZnTe type-II heterojunctions under the influence of hydrostatic pressure are calculated using a variational method. The heterojunction is approximated as a quantum well with finite triangle confining potentials for both electrons and holes. The subband energies and wavefunctions of the electrons and heavy holes are obtained with the help of the asymptotic transfer method. The results show that the effect of the electron (hole)–LO phonon interaction on the exciton binding energy is not neglected for the ZnSe/ZnTe type-II heterojunctions. The pressure-induced increase of the exciton binding energy is obvious and the increase is mainly through the pressure influence on the electron effective masses.