Abstract
The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidic layer is about 3.1 nm thick and contains Si–Fx species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOH species are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface is smoother than the Si/natural oxide interface.
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