Abstract
Our first-principles calculations show that a change of carrier type from electron to hole can be achieved in monolayer epitaxial graphene on SiC(0001¯) by fluorine (F) intercalation. The p-doping level in graphene, however, is not monotonously enhanced as the F coverage increases, and an interesting interface magnetism is observed at the partially passivated interface. Because intercalated F atoms prefer to bond to the substrate than to the graphene, F-intercalation provides a promising way of “interface modulation doping” to tailor the electronic properties of epitaxial graphene on SiC(0001¯) without appreciably degrading its intrinsic high mobility.
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