Abstract
The development of advanced magnetic tunnel junctions with a single-digit nanometer footprint can be achieved using an elongated multilayered ferromagnetic free layer structure. We demonstrate the switching of a composite free layer consisting of two ferromagnets separated by an MgO layer and an additional capping MgO layer to boost perpendicular anisotropy. A proper design of the free layer and its interface-induced perpendicular anisotropy helps to achieve reliable switching.
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