Abstract
Here we show that the enhancement of exchange field at the nonmagnetic-semimagnetic semiconductor interface can be described by δ-localized exchange field. In this model, the wave functions of electron, confined in quantum well with semimagnetic barriers can be found analytically for an arbitrary orientation of magnetic field B with respect to growth axis C. Two cases corresponding to B || C and B 1 C are considered. The comparison of present approach with experimental data shows that the proposed method is an efficient tool for interface investigation in 2D quantum structures.
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