Interface effects for very thin Al films deposited onto Cu, Si and SiO2 substrates

Abstract

AbstractAl has been deposited by PVD in UHV onto Cu, Si and SiO2 substrates. The film surfaces have been analysed quasi in‐situ by XPS for increasing Al film thickness. At very low coverages, Al shows shifts in binding energy of Al 2p and the modified Auger parameter. These shifts are produced as an effect of the interaction with the substrate and depend on the amount of Al coverage and the type of substrate. They decrease with increasing conductivity of the substrate (SiO2, Si and Cu) and with increasing Al coverage. For thicker Al films the modified Auger parameter tends to its bulk value. Auger parameter shifts are discussed in terms of chemical state plots and the relaxation energy of the photoholes. Copyright © 2004 John Wiley & Sons, Ltd.