Abstract
AbstractEarlier work revealed that the transverse thermal conductivity of thin films of amorphous SiO2 deposited on monocrystalline silicon decreased substantially when the film thickness was less than about 1 µm. When multiple interfaces were created by the intercalation of thin intermediate layers of polycrystalline silicon into the SiO2 film, the thickness effect was enhanced. This observation pointed to an interfacial effect. A model accounting for the interface effect is discussed.
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