Abstract
Ge 2 Sb 2 Te 5 superlattice-like thin films show great potential for phase-change memory applications. Improvement of the thermal properties of Ge 2 Sb 2 Te 5 is believed to be related to the Ge 2 Sb 2 Te 5 /Sb interface. The stress effect and interface effect on Ge 2 Sb 2 Te 5 manifest in structural changes that are observed via X-ray diffraction and Raman spectroscopy experiments. The structure changes from corner-sharing GeTe 4-n Ge n (n = 0) in single-layered Ge 2 Sb 2 Te 5 to GeTe 4-n Ge n (n = 1, 2, 3) tetrahedra in the superlattice-like thin films that are observed. As a result, Ge 2 Sb 2 Te 5 prefers the hexagonal structure rather than the face-centred cubic structure during heating.
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