Abstract
Interface diffusion and chemical reaction between a lead zirconate titanate (PZT) layer and an Si substrate during annealing treatment in N 2 or in a vacuum were studied using AES depth profile and lineshape analysis techniques. The results indicated that annealing treatment in a high vacuum was able to inhibit interface diffusion and oxidation completely. Annealing treatment in N 2 can reduce interface oxidation of Si substrate and interface diffusion significantly but not completely. The residual oxygen in N 2 caused interface diffusion and oxidization, which resulted in the formation of an SiO 2 interlayer. Annealing treatment at a high temperature in N 2 or in a vacuum caused the loss of lattice oxygen in the PZT layer. Interface oxidation was governed mainly by the diffusion of oxygen in the SiO 2 layer, and the apparent activation energy of the interface oxidation was 128.2 kJ mol -1 .
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