Interface Defect Engineering of MoS2 Monolayer: Interface Defect Engineering of a Large‐Scale CVD‐Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate (Adv. Mater. Interfaces 14/2021)

Abstract

In article number 2100428, Sang Wook Han, Soon Cheol Hong, and co-workers uncover that the residual Na cations at the SiO2 substrate during a NaCl-assisted chemical vapor deposition-growth process induce the n-type doping into the large-scale supported uniform MoS2 monolayer. Furthermore, the residual Na cations are electrically moved toward the bottom side of the MoS2 monolayer to cure the interfacial sulfur vacancy defects.