Abstract
Several experiments converge to demonstrate the strong variation of the front channel properties with the substrate bias in thin film SOI-MOS structures. A model is proposed to explain the deformation of the transconductance shape and the variation of its maximum. A related second order effect consists in the modification of the effective channel length. It is also shown that the majority or minority carrier reservoirs existing at the buried interface are responsible for the perturbation of the front channel charge pumping effect. The influence of the interface coupling on other phenomena (low-frequency noise, parasitic conduction on the edges of the Si island and formation of back interface defects) is discussed.
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