Abstract
The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics. For example, SrRuO3 is a promising material where external stimuli like strain, temperature and structural distortions control the stability of electronic and magnetic states, across its magnetic phase transition, useful for Spintronics. Despite this, not much has been studied to understand such correlations in SrRuO3. Here we explore the influence of electron-lattice correlation to electron-transport, at interfaces between SrRuO3 and Nb:SrTiO3 across its ferromagnetic transition, using a nanoscale transport probe and first-principles calculations. We find that the geometrical reconstructions at the interface and hence modifications in electronic structures dominate the transmission across its ferromagnetic transition, eventually flipping the charge-transport length-scale in SrRuO3. This approach can be easily extended to other devices where competing ground states can lead to different functional properties across their heterointerfaces.
Highlights
The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics
The substrates are chemically treated to ensure a uniform TiO2 termination and characterized for their surface quality with atomic force microscopy (AFM)[13]. This process assumes critical importance because a clean, defect free starting surface is highly desirable for the growth of crystalline epitaxial films of SrRuO3 and determines a uniform electronic transport across such a metal-semiconductor (M-S) interface
The grown SrRuO3 films were characterized for their electronic transport and magnetic properties using standard van der Pauw method and superconducting quantum interference device (SQUID) magnetometry, respectively
Summary
The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics. We find that the geometrical reconstructions at the interface and modifications in electronic structures dominate the transmission across its ferromagnetic transition, eventually flipping the charge-transport length-scale in SrRuO3 This approach can be extended to other devices where competing ground states can lead to different functional properties across their heterointerfaces. Complex oxides have propelled a vast research field, in establishing itself as frontiers in electronic materials by offering unique prospects to control and manipulate new functionalities across their heterointerfaces[1,2,3,4,5] These materials, typically of the form ABO3, exhibit strong correlations between the charge, spin, orbital and lattice degrees of freedom, leading to modulation of their device properties and are emerging as strong contenders for Beyond Moore technology. We combine these findings with density functional theory (DFT) calculations to quantitatively understand the role of interface reconstruction, octahedral distortions and exchange splitting in the observed features in electronic transport
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