Interface conditions for the boltzmann equation and derived transport models at heterojunctions in non-equilibrium

Abstract

The paper deals with fundamental electron transport across heterojunctions in semiconductor devices. Interface conditions are presented for the Boltzmann equation at general heterojunctions modelled by band edge discontinuities. It is shown that these bouindary conditions are consistent with the volume Boltzmann equation. Furthermore, a method for constituting respective boundary conditions for moment equations of the Boltzmann equations is derived. The method is applied to a selected transport model. Results are given concerning the interface conditions for particle and energy flow, quasi-Fermi level, and electron temperature at the interface.