Abstract
In this study, the interface chemistry and adhesion strength between a porous extra-low-dielectric-constant film and etch stop layers were investigated with different plasma treatments. An interlayer of thick between the porous film and layers was found to be composed of Si, N, C, and O. The interface was constructed by mixing bonds, including , , , , etc. Under and plasma treatments, a large amount of weak and bonds were broken, and more related bonds of high binding energy formed at the interfaces. Moreover, under the accumulation of sufficient shear stresses around the indented regions during nanoindentation tests, interface delamination between the porous film and layers occurred. The interface adhesion energy between untreated porous film and layers was accordingly measured as . After plasma treatments, especially plasma, the adhesion strength was effectively improved to .
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