Abstract
Junctions doped with a small mount of Al between the top ferromagnetic electrode and the insulator were fabricated. The tunnel magnetoresistance (TMR) ratio increased at the doped Al thickness of 0.2 nm after annealing at 250 °C. Inelastic-electron-tunneling spectroscopy (IETS) has been applied to investigate the spin-dependent tunneling process for the tunnel junctions. The IET spectrum subtracting the spectrum at parallel magnetization configuration from that at antiparallel configuration showed a peak around 20 mV of the bias voltage especially for the junction after annealing at 250 °C. Over the corresponding voltage the TMR ratio as a function of the bias decreased; however, the influence was relatively small.
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