Abstract
The interfaces between dielectrics and semiconductors play a dominant role in the performance of both electronic and optoelectronic devices. In this article, we report the band offset characterization of atomic layer deposited Al2O3 on non‐polar m‐plane GaN grown by hybrid vapor phase epitaxy using X‐ray photoelectron spectroscopy (XPS). The surface band bending of GaN was investigated by employing the angle resolved XPS (ARXPS). The Fermi level pinning is found to be at ∼2.4 eV above valence band maximum near the surface. The valence band offset and conduction band offset at the Al2O3 and m‐plane GaN interface were determined to be 1.0 and 2.2 eV respectively. Electrical measurement was done by using metal–oxide–semiconductor capacitor. Capacitance–voltage hysteresis loop indicated low density of oxide traps. The frequency dependent C–V curves also showed a small dispersion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
