Abstract
A new electrolyte based on a solution of 10 g of ammonium pentoborate in 100 ml of ethylene glycol buffered to a ph of 6.0 has been used to produce a dielectric layer on the surface of InP. The relative permittivity of the anodic oxide is 7.9 and its dielectric breakdown strength is 3×106v/cm. The electrical characteristics of the surface states at the anodic oxide–-type InP interface have been investigated using MOS capacitors. Capacitance–voltage data at 200 kHz indicate that the InP surface is already depleted at zero bias with a flat band voltage of 0.85 V. An inversion-type low frequency (1 Hz) response has been observed for the first time on an InP MOS structure using an anodic oxide. Our analysis of the admittance data yields a U-shaped surface state distribution having a minimum density of 4×1011 cm−2 eV−1 at mid-band gap. Many other fea ures of our results also resemble those previously obtained with InP/organic insulator structures.
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