Abstract
ZnSe-ZnSSe and ZnSe-ZnS strained-layer superlattices (SLS), exhibiting excellent optical properties, have for the first time been prepared on (100) GaAs substrates by a conventional low-pressure metal-organic chemical-vapor-deposition (MOCVD) technique. The experimental X-ray diffraction patterns are analyzed in terms of the kinematic approximation from which the strains being included in each layer can be quantitatively evaluated. The excitonic line and its spectral shape in the SLS, depending upon the composition of S in the ZnSSe barrier layer, are investigated at 4.2 K; with decreasing the barrier height the ground-state exciton binding energy is considerably lowered and its linewidth becomes narrow. We have found light-hole and heavy-hole exciton transitions in the absorption spectrum and in particular the existence of the light-hole exciton is confirmed by the excitation spectrum.
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