Abstract
The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.
Highlights
Si/Ge core-shell nanowires (CSNWs) have attracted considerable interest for their promising applications in thermoelectric and optoelectronic nanodevices.[1,2,3,4,5,6] In order to enhance the reliability of these devices, it is paramount to understand the interface effect and relevant thermal transport properties of Si/Ge CSNWs
Relationship between interface effect and thermal conductivity, more importantly, how to control the thermal transport property in Si/Ge CSNWs, in this contribution we present a theoretical method to clarify the thermal conductivity of Si/Ge CSNWs based on the atomic-bond-relaxation method and continuum mechanics
Based on the atomic-bond-relaxation method and continuum mechanics, we have established an analytic model to pursue the physical mechanism with regard to the interface effect on thermal conductivity of Si/Ge CSNWs
Summary
Si/Ge core-shell nanowires (CSNWs) have attracted considerable interest for their promising applications in thermoelectric and optoelectronic nanodevices.[1,2,3,4,5,6] In order to enhance the reliability of these devices, it is paramount to understand the interface effect and relevant thermal transport properties of Si/Ge CSNWs. The validity of J = −κ∇T is not longer applicable for the nanoscale regime. This triggered a lot of theoretical works to explore the thermal conductivity of nanostructures.[15,16,17,18,19,24,25,26,27,28]. Many efforts about the thermal transport properties of CSNWs have been made to understand the relationship between interface and thermal conductivity, there are many important and fundamental issues remain unsolved. Relationship between interface effect and thermal conductivity, more importantly, how to control the thermal transport property in Si/Ge CSNWs, in this contribution we present a theoretical method to clarify the thermal conductivity of Si/Ge CSNWs based on the atomic-bond-relaxation method and continuum mechanics
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