Abstract
Molecular beam epitaxy of a polytype heterostructure, GaSb/AlSb/InAs, has been studied. Controlled continuous growth of the polytype structure has been achieved by observing intensity oscillations of reflection high energy electron diffraction (RHEED) for the first time. In order to obtain a desired artificial sharp interface, we have studied the surface stability of grown layers during the interchanging operation of component molecular beams at the growth of polytype interfaces. From the analysis of RHEED and Auger electron spectroscopy, the grown heterostructure was confirmed to be well controlled as designed under the growth at relatively low temperatures.
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