Abstract
Angular-resolved synchrotron radiation photoemission spectroscopy and reflection high-energy electron diffraction (RHEED) are used to study the molecular-beam epitaxy of CdTe/ α-Sn(110) interfaces and superlattices. Core level photoemission spectra indicate that both sides of the interface are stable, nonreactive, and abrupt for growth temperatures up to 100 °C. At the α-Sn/CdTe interface, the valence band maximum at Γ is at EV=1.1 eV below the Fermi level. This gives a valence band offset of ΔEV=1.1 eV, assuming zero band gap for the Sn. Stable superlattices of α-Sn/CdTe(110) have been grown at 100 °C. The surface quality of the superstructure degrades after the growth of several α-Sn/CdTe periods. After the growth of ten periods each 50-Å thick, the RHEED pattern shows mainly three-dimensional bulk diffraction, indicating increased surface, and interface roughness.
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