Abstract
New structures and materials alternative to conventional bulk-Si(001) substrates are now under consideration for their application to CMOS channel layers on a Si platform. However, mismatch of lattice parameter between the alternative channel material and the Si substrate inevitably causes defect introduction which is one of crucial issues when implementing the formation of channels on Si. In this work, we perform interface and defect engineering for group IV semiconductor materials; Si with hybrid crystal orientation, Ge, and Sn. Engineered channel crystals formed with the wafer direct bonding and heteroepitaxy technologies are characterized in terms of crystalline quality and strain.
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