Abstract
Vanadium dioxide (VO2), as a representative metal-to-insulator transition (MIT) material, is of utmost interest for various device applications such as memory devices, memristors, Mott transistors, and temperature sensors due to its MIT temperature near room temperature. However, it is difficult to fabricate a stable VO2 film, especially on Si wafer since its interfacial mixing alters the physicochemical properties of VO2. This study demonstrates that stable VO2 thin films with reduced interfacial mixing can be fabricated using a sequential process consisting of a vanadium metal e-beam evaporator and thermal post oxidation.The device fabricated with VO2 shows distinctive multi-level MIT characteristics with bulk current–voltage curves with reproducible on/off switching behavior, which matches well with nanoscale transition probed by the conductive atomic force microscopy analysis. Our findings pave the way to produce highly stable VO2 thin films as well as applications for integrated Si-based semiconductor devices such as memory devices, ultrafast switches, and others.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.