Abstract
Diode r.f.-sputtering technique is used to produce W-C, Rh-C and Ni-C ultra-thin layer stacks for application in the soft X-ray domain as optical systems. In situ kinetic ellipsometry is used to calibrate the deposition rates and to analyze precisely the different interface formations. Grazing X-ray reflection at 1.54Å is also applied to the same multilayers. The carbon-metal interface is quasi-perfect for tungsten, but a non-negligible interdiffusion occurs for rhodium deposition (≅ 5Å) and for the nickel layers (up to 20Å). At the metal-carbon interface a smoothing effect of the carbon layer occurs in each case, its magnitude depending on the roughness of the metallic surface (≅ 4Åfor tungsten, ≅ 5Åfor rhodium and ≅ 7Åfor nickel). In the case of the light elements (rhodium and especially nickel), the carbon layer is mixed with the metallic element and becomes pure only after a thickness of some tens of ångstro¨ms.
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