Interelectrode space effect on power dissipation and silicon oxide thin film growth from TEOS/O2 discharges

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The effect of the electrode gap on the electrical properties of TEOS/O2 discharges and on the growth rate of silicon oxide thin film was investigated. The experiments were performed using two excitation frequencies (13.56 MHz and 27.12 MHz) and at conditions that lead to deposition of films with a high inorganic character. Higher electrode gaps were always followed by an increase of the power consumption and the deposition rate. An additional enhancement was found with an increase of frequency from 13.56 to 27.12 MHz, indicating that a combination of high electrode gaps and frequencies are necessary for the fast deposition of inorganic SiO2 thin films from TEOS/O2 discharges.