Interdigitated electrodes connected WO3 nanowire arrays for high performance UV photodetection

Abstract

In this article, MSM based Au/WO3 Nanowires (NWs) were fabricated on n-type silicon substrate using glancing angle deposition inside the RF sputtering chamber for high performance ultraviolet photodetector (UV-PD). The field emission scanning electron microscope analysis shows uniform and vertically oriented WO3 NWs on Si substrate. The non-linear I-V characteristics of the device represents that there is good Schottky junction formation at the metal–semiconductor interface. The fabricated Au/WO3 NW/Si device showed high responsivity of 462.6 A/W, specific detectivity of 1.06 × 1013 Jones and a low noise-equivalent power of 3.17 × 10−13 respectively, under 380 nm light illumination. A fast UV-PD response of 2.7 ms and 2.8 ms was obtained at 0 V.