Abstract
The gallium-rich side of some rare earth-gallium binary systems was studied using a diffusion couple technique. Diffusion couples were formed by annealing rare earth metals immersed in liquid gallium at various temperatures. The nature and composition of the compound layers formed at the rare earth metal-gallium interface were determined by metallographic and electron microprobe analysis. The results indicate that in the light rare earth metals (R ≡ La-Gd) the ϵ phase extends from the stoichiometric composition RGa 2 to the gallium-rich compositions R 1− x Ga 2+ x . In these systems the RGa 6 layer is dominant in the diffusion region. No RGa 3 layer is present in these systems, in contrast with the two heavy rare earth-gallium couples (Tb-Ga and Dy-Ga) in which the ϵ phase appears at the stoichiometric composition only and the RGa 3 layer is dominant.
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