Abstract
Mass and Energy Dispersive Heavy Ion Recoil Spectrometry (RS) employing 75.6 MeV 127I ions has been used to analyse thin films of strontium bismuth tantalate (SBT) at the heavy ion recoil facility at ANSTO, Lucas Heights. The new ferroelectric material ‘Y1’, SrBi2Ta2O9 or SBT, has been developed for application in memory chips due to its excellent fatigue resistance. In other ferroelectric films developed for similar applications, e.g. BaxSr1−xTiO3 or BST1, there has been evidence of interdiffusion during the annealing process of the films. This study uses RS to determine the amount of interdiffusion in a standard treatment of SBT deposited on a Pt electrode on a Si substrate with a Ti adhesion layer. Depth profiles for all major elements and carbon have been obtained. Analysis reveals no depletion of oxygen in the SBT layer closest to the platinum electrode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
