Abstract
Mass and Energy Dispersive Heavy Ion Recoil Spectrometry (RS) employing 75.6 MeV 127I ions has been used to analyse thin films of strontium bismuth tantalate (SBT) at the heavy ion recoil facility at ANSTO, Lucas Heights. The new ferroelectric material ‘Y1’, SrBi2Ta2O9 or SBT, has been developed for application in memory chips due to its excellent fatigue resistance. In other ferroelectric films developed for similar applications, e.g. BaxSr1−xTiO3 or BST1, there has been evidence of interdiffusion during the annealing process of the films. This study uses RS to determine the amount of interdiffusion in a standard treatment of SBT deposited on a Pt electrode on a Si substrate with a Ti adhesion layer. Depth profiles for all major elements and carbon have been obtained. Analysis reveals no depletion of oxygen in the SBT layer closest to the platinum electrode.
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