Interdiffusion, phase formation, and stress development in Cu–Pd thin-film diffusion couples: Interface thermodynamics and mechanisms

Abstract

Listen

Translate article

Cu–Pd thin-film diffusion couples (individual layer thicknesses of 50nm) have been prepared by dc-magnetron sputtering on silicon substrates coated with a thin amorphous Si3N4 layer. Stress evolution, microstructural development, and phase formation during interdiffusion have been investigated employing Auger-electron spectroscopy (in combination with sputter-depth profiling), x-ray diffraction, wafer curvature measurements and transmission electron microscopy. Upon annealing at relatively low temperatures (175–250°C) for durations up to 10h, considerable diffusional intermixing occurs. Interdiffusion is accompanied by sequential formation of new phases. First, Cu3Pd forms; subsequently, CuPd forms and grows at the expense of Cu3Pd, which has been interpreted as a consequence of interface thermodynamics. Annealing leads to a slight sharpening of the pre-existing {111}-fiber textures and a little increase in the average grain size. A combination of ex situ (x-ray diffraction) and in situ (wafer curvature) stress measurements revealed that tensile stresses are generated during annealing. The obtained stress results have been discussed in the light of possible mechanisms of stress generation, and the dominant sources of stress buildup and relaxation have been identified.