Abstract
The interdiffusion of vacuum-deposited Cu/Ni bilayers is investigated for annealing at temperatures from 500 to 800°C. Backscattering spectra, electrical sheet resistance data and X-ray analysis confirm independently that strong interdiffusion sets in at 400°C after annealing for 15 min. We conclude that thin nickel films will not perform as reliable diffusion barrier for copper in metallization schemes with silicon.
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