Abstract
The evolution of electrical resistance, stress, and microstructure during annealing has been studied on 100 nm NiFe(20 wt %)/200 nm Cu/100 nm NiFe trilayers. Irreversible resistance changes and the concentration-depth profiles show that, at and above 200 °C, diffusion of Ni into Cu as well as of Cu into NiFe occurs. The interdiffusion is held for an important failure mechanism of Cu/NiFe-based magnetoelectronic system at elevated temperatures.
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