Abstract
The interdiffusion in amorphous Nb/Si multilayers has been studied using X-ray optical reflection and TEM in a temperature range from 150°C to 350°C. In the whole temperature scale, the experimental data show that annealing causes interface shift without any other detectable change of multilayer parameters, namely period and interface roughness. The model based on diffusion of Si into Nb has been proposed, which fits very well to the Arrhenius relation for diffusion coefficient and provides values comparable with previously published ones.
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