Abstract
The interdiffusion in amorphous Nb/Si multilayers has been studied using X-ray optical reflection and TEM in a temperature range from 150°C to 350°C. In the whole temperature scale, the experimental data show that annealing causes interface shift without any other detectable change of multilayer parameters, namely period and interface roughness. The model based on diffusion of Si into Nb has been proposed, which fits very well to the Arrhenius relation for diffusion coefficient and provides values comparable with previously published ones.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
