Abstract
AbstractInterdiffusion in the gold/nickel bilayer thin films deposited on silicon(111) wafers in the temperature range 200–500 °C has been studied using x‐ray photoelectron spectroscopy (XPS), sheet resistance measurements (SRM) and x‐ray diffraction. Two independent methods have been used to determine the diffusion coefficients: the accumulation concentration of nickel on the gold surface using XPS; and the variation of sheet resistance as a function of annealing time and temperature.The diffusion coefficients deduced from XPS and SRM are (4.0 × 10−11 cm2 s−1) exp(−0.79 eV/kT) and (4.8 × 10−11 cm2 s−1) exp(−0.83 eV/kT), respectively. It is shown that diffusion of nickel through the gold layer causes a considerable loss in conductivity of the bilayer thin films. Copyright © 2001 John Wiley & Sons, Ltd.
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