Abstract
We present investigations on the interdiffusion behavior and thermal stability of n-doped and undoped GaInAs/AlGaInAs multiple-quantum-well structures, grown lattice matched on InP by molecular-beam epitaxy. The activation energy of the main interdiffusion process is determined to Ean doped=2.5 eV and Eaundoped=2.9 eV. The different interdiffusion processes are monitored mainly by photoluminescence spectroscopy at T=8 K after rapid thermal annealing of the samples. The influence of doping is studied by comparing the results of n-doped and undoped structures. Additionally photoluminescence excitation spectroscopy at T=2 K was carried out to verify the different interdiffusion processes.
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