Abstract
Self-assembled coherent InAs islands on GaAs (100) have beeninvestigated by a novel version of grazing-incidence diffraction("iso-strain scattering”). This method permits the determination ofthe interdependence of strain and shape, as well as the relaxationgradient within the InAs dots. The relaxation in the islandsranges from fully strained at the bottom to completely relaxed at thetop of the islands. The radius of the dots at a given height dependslinearly on the local elastic lattice relaxation, with a rapidlyincreasing relaxation gradient when approaching the top of theislands.
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