Abstract
A novel chemical vapor deposition (CVD) method to form Al-Cu wirings and via filling by simultaneous doping of Cu (Al-Cu CVD) has been developed and demonstrated for advanced ULSI applications. The success of Al-Cu CVD was accomplished by finding appropriate Al and Cu metalorganic precursors: dimethylaluminum-hydride and cyclopentadienylcopper-triethylphosphine. The deposited Al-Cu film had an excellent uniformity of Cu distribution and contained CuAl/sub 2/ phase that is indicative of hypo-eutectic Al-Cu alloy applicable to a practical interconnection use. It was shown that the electric resistance and electromigration endurance of CVD Al was improved by Cu incorporation using this simultaneous Cu doping method. >
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