Abstract

Solid-state spintronic devices are energy-efficient for data storage and energy harvesting. This field is revolutionized by the discovery of giant magnetoresistance. Recently, Qian et al. fabricated an intercalated chiral-molecular two-dimensional superlattice that exhibits highly efficient chiral-induced spin selectivity. They demonstrated a tunneling magnetoresistance ratio of >300% and a spin polarization ratio of >60%, which opens up promising future applications in spintronic devices.

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