Abstract
Negative differential resistance due to interband tunneling has been observed at room temperatures for the first time in polytype heterostructures of InAs/AlSb/GaSb. The peak-to-valley ratio is about 1.7:1 (5.5:1 at 77 K) for an AlSb barrier width of 2.5 nm. The peak current density is studied as a function of barrier width and compared to calculations based on the two-band model.
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