Interband tansition and electronic structures in strained In x Ga1−x N/GaN multiple quantum well

Abstract

In x Ga1−x N/GaN multiple quantum wells (MQWs), composed of 28-A In0.29Ga0.71N wells and 24-A In0.23Ga0.77N wells, were grown by using metal-organic chemical vapor deposition. Temperaturedependent photoluminescence (PL) spectra showed that the energies of the two dominant peaks in the In x Ga1−x N/GaN MQWs decreased with increasing temperature. The electronic subband energies and the wavefunctions in the In x Ga1−x N/GaN MQWs were calculated by solving the Schrodinger equation in the 8-band envelope function approximation. The effects of the spontaneous polarization, strain and piezoelectric polarizations on the electronic structures of the In x Ga1−x N/GaN MQWs were examined to explain the PL data. The calculated interband transition energies from the ground electronic subbands to the ground hole subbands in In x Ga1−x N/GaN MQWs were in reasonable agreement with those obtained from the PL spectra.