Abstract
Abstract A theoretical model is presented for the radiation from a forward-biased silicon p-n junction. Electrons in the minimum of the conduction band make a radiative transition to a hole at the top of the valency band. For indirect band-gap materials phonon assistance is necessary for this process. The frequency distribution of emission is explained in terms of the band-parameters, electron and hole distribution functions and the phonon spectrum. Good agreement is obtained with established experimental results.
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